| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for growing zinc oxide having little crystal defect and being excellent in single crystallinity and flatness on a substrate. <P>SOLUTION: The single crystal layer 11 of zinc oxide is grown by blowing a material gas containing at least an organic zinc compound material not containing an oxygen atom and steam on the substrate 10 using an organic metal compound not containing oxygen and steam by an MOCVD method at a growing temperature of 250-450°C and a growing pressure of 1-30 kPa. After the ZnO crystal layer 11 is grown, heat treatment is performed for the purpose of the enhancement of the crystallinity and flatness of the ZnO crystal layer 11 at 700-1,100°C and under a pressure of 1-30 kPa. The heat treatment is favorably performed under a steam atmosphere. <P>COPYRIGHT: (C)2010,JPO&INPIT |
