| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the influence of variance in manufacturing a sense circuit including a constant current source. <P>SOLUTION: The semiconductor device 101 includes: a plurality of memory cells MC having a conductive electrode coupled with the output terminal of a corresponding first constant current source IS and configured to store data based on a threshold voltage, the threshold voltage being changeable; a variable resistance element coupled with the output terminal of a second constant current source ISR; a plurality of sense amplifiers SA for comparing the potential of the output terminal of the corresponding first constant current source IS with that of the output terminal of the second constant current source ISR and outputting a signal indicating a comparison result; a plurality of first adjustment memory cells MCT having conductive electrodes coupled with the output terminal of the corresponding first constant current source IS, a threshold voltage being changeable; and second adjustment memory cells MCTR having conductive electrodes coupled with the output terminal of the second constant current source ISR, a threshold voltage being changeable. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
