发明名称 METHOD FOR PRODUCING GROUP 13 METAL NITRIDE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for producing a group 13 metal nitride crystal, which is an industrially favorable production method, wherein the Li content in an obtained crystal is low. Ž<P>SOLUTION: The method comprises using a solvent as an ionic solvent containing a total of 0.1-14 mol% of at least one halide selected from the group consisting of a sodium halide, a potassium halide, and a cesium halide, and containing a lithium halide, when growing the group 13 metal nitride crystal on a seed 6 in a liquid 9 containing a nitrogen element, a group 13 element, and the ionic solvent. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010070447(A) 申请公布日期 2010.04.02
申请号 JP20090150993 申请日期 2009.06.25
申请人 MITSUBISHI CHEMICALS CORP 发明人 KUBOTA KOHEI;TAWARA TAKESHI;TAKEUCHI SACHIE;SEKI YOSHINORI;TERADA HIDE
分类号 C30B29/38;C30B19/02 主分类号 C30B29/38
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