发明名称 PLASMA PROCESSING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To prevent an abnormal discharge to an inner surface of a skirt hole at the earth electrode of a plasma processing device to prevent an uneven processing. Ž<P>SOLUTION: A dielectric member 60 is arranged on a discharge surface 42 facing an electric field applied electrode 30 of the earth electrode 40 of the plasma processing device. A plurality of skirt introduction holes 61 are formed to the dielectric member 60. A skirt hole 41 having an opening area larger than the total opening area of the plurality of skirt introduction holes 61 is formed to the earth electrode 40. The plurality of skirt introduction holes 61 are commonly connected to the skirt hole 41. Preferably, the skirt hole 41 is formed in a long-hole-shaped extending to the arrangement direction of the skirt introduction holes 61. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010073910(A) 申请公布日期 2010.04.02
申请号 JP20080240224 申请日期 2008.09.19
申请人 SEKISUI CHEM CO LTD 发明人 TAKEUCHI HIROTO
分类号 H01L21/3065;C23C16/455;C23C16/509;H01L21/304 主分类号 H01L21/3065
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