发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY SYSTEM AND METHOD OF DETERMINING REGION TO BE INSPECTED IN LITHOGRAPHY INSPECTION APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To efficiently inspect a region which easily causes a deterioration in lithography accuracy with a lithography inspection apparatus 2 for inspecting the results of lithography by a charged particle beam lithography system 1. <P>SOLUTION: The lithography system 1 is provided with a means 407 for calculating the coordinates of a region which easily causes a deterioration in lithography accuracy such as a frame border region, a sub-frame border region, and a divided shot region as the coordinates of a region requiring inspection based on control data (shot data) for lithography and a means 408 for converting the coordinates of the region requiring inspection to a coordinate format of an inspection apparatus 2 to output it. The coordinates of the region requiring inspection are input to the inspection apparatus 2. A region which is inspected by the inspection apparatus 2 is determined in reference to the coordinates of the region requiring inspection. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010073934(A) 申请公布日期 2010.04.02
申请号 JP20080240533 申请日期 2008.09.19
申请人 NUFLARE TECHNOLOGY INC 发明人 TAKEKOSHI HIDEKAZU
分类号 H01L21/027;G03F7/20;H01J37/305 主分类号 H01L21/027
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