发明名称 |
METHOD FOR MANUFACTURING WAVEGUIDE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a waveguide for obtaining the waveguide having a narrower mesa shape and a smooth sidewall. SOLUTION: The method for manufacturing the waveguide includes steps of: preparing a first substrate having a slab waveguide layer; depositing a silicon oxide film on the first substrate; forming a mask layer having a predetermined pattern apertures thereon; removing the silicon oxide film in the aperture and removing a part of the silicon oxide film adjacent to this under the mask layer by using the mask layer as a mask; forming a layered structure of a first metal and a second metal having lower etching selectivity than the slab waveguide layer on the mask layer and on the slab waveguide layer; removing the mask layer and the silicon oxide film; patterning the slab waveguide layer by using the second metal as a mask to form a mesa waveguide; and lifting off the second metal together with the first metal. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010072515(A) |
申请公布日期 |
2010.04.02 |
申请号 |
JP20080242200 |
申请日期 |
2008.09.22 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE& TECHNOLOGY |
发明人 |
AKITA KAZUMICHI;AKIMOTO RYOICHI |
分类号 |
G02B6/13;G02F1/017 |
主分类号 |
G02B6/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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