发明名称 METHOD FOR MANUFACTURING WAVEGUIDE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a waveguide for obtaining the waveguide having a narrower mesa shape and a smooth sidewall. SOLUTION: The method for manufacturing the waveguide includes steps of: preparing a first substrate having a slab waveguide layer; depositing a silicon oxide film on the first substrate; forming a mask layer having a predetermined pattern apertures thereon; removing the silicon oxide film in the aperture and removing a part of the silicon oxide film adjacent to this under the mask layer by using the mask layer as a mask; forming a layered structure of a first metal and a second metal having lower etching selectivity than the slab waveguide layer on the mask layer and on the slab waveguide layer; removing the mask layer and the silicon oxide film; patterning the slab waveguide layer by using the second metal as a mask to form a mesa waveguide; and lifting off the second metal together with the first metal. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010072515(A) 申请公布日期 2010.04.02
申请号 JP20080242200 申请日期 2008.09.22
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE& TECHNOLOGY 发明人 AKITA KAZUMICHI;AKIMOTO RYOICHI
分类号 G02B6/13;G02F1/017 主分类号 G02B6/13
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