| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for obtaining a HEMT which achieves a normally off characteristic, does not cause a decrease in a saturated current value and is excellent in a current characteristic between a drain and a source to a gate voltage. SOLUTION: The semiconductor device includes: a first semiconductor layer 131; a second semiconductor layer 133 laminated on the principal plane 135 of the first semiconductor layer 131 and causing a 2DEG layer 137 on the principal plane 135 side of the first semiconductor layer 131; a third semiconductor layer 139 formed of a semiconductor material large in electron affinity χ compared with the first semiconductor layer 131 and the second semiconductor layer 133, and electrically connected with the 2DEG layer 137; an insulation layer 157 provided on the second semiconductor layer 133 and the third semiconductor layer 139; a first electrode 151 subjected to ohmic connection to the third semiconductor layer 139; a second electrode 153 provided on the second semiconductor layer 133 and the third semiconductor layer 139 via the insulation layer 157; and a third electrode 155 interposing the second electrode 153 between the first electrode 151 and the third electrode 155, and electrically connected with the 2DEG layer 137. COPYRIGHT: (C)2010,JPO&INPIT
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