| 摘要 |
PROBLEM TO BE SOLVED: To achieve a high carrier mobility by making a carrier smoothly movable in a current channel on a gate insulating film in an organic thin film transistor. SOLUTION: The organic thin film transistor includes an insulating substrate 10, a gate electrode 11 formed on the insulating substrate, the gate insulating film 12 formed on the gate electrode 11, an organic electron material film 13 laminated on the gate insulating film 12 and having the current channel 16 nearby an interface coming into contact with the gate insulating film 12, and a source electrode 15 and a drain electrode 14 for supplying a current to the current channel 16 of the organic electron material film, wherein the gate electrode 12 for controlling the current flowing to the current channel 16 is made of amorphous metal. COPYRIGHT: (C)2010,JPO&INPIT |
