| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing deposits for removing the deposits contained in a semiconductor wafer and preventing the corrosion of aluminum wiring or the like. SOLUTION: A method for manufacturing a semiconductor device includes: a process of dry etching an aluminum film 3 formed on a semiconductor wafer 2 under plasma gas; a process of supplying a developer to a substrate 1 formed on the basis of the dry etching process; and a process of performing the first paddle treatment of stopping the substrate 1 for a second time period that is equal to or shorter than a first time period a plurality of times after rotating the substrate 1 for the first time period. The first paddle treatment selectively removes a reaction product 5 produced when dry-etching the aluminum film 3. COPYRIGHT: (C)2010,JPO&INPIT
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