| 摘要 |
<p>PURPOSE: In the semiconductor device and manufacturing method thereof is the gate poly and trench inside, the nitride pattern is formed on the gate oxidation film. The loss of the gate oxidation film is prevented in the etching process. CONSTITUTION: A gate oxidation film(130) is formed in the inner surface of the trench of the semiconductor substrate. The gate poly(135) is formed in the trench. The oxide film(140) is formed in the top of the substrate of result. The impurity ion is inserted in the semiconductor substrate and area-source is formed. It copes with the gate oxidation film and the nitride pattern is formed on the oxide film. The insulating layer is formed in the top of the substrate of result. The insulating layer is etched and the contact hole for the area-source exposure is formed.</p> |
