| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a film deposition method and a film deposition apparatus capable of executing the film deposition of a metallic film containing less impurities at low temperature and with excellent step coverage. <P>SOLUTION: The film deposition method includes a step of adsorbing raw metal gas containing the predetermined metallic element in a vapor phase state on a substrate 1 to form an adsorption layer 2, a step of generating a formate film 3 of the predetermined metallic element on the substrate 1 by feeding formic acid on the adsorption layer 2, and a step of forming a metallic film 4 by applying the energy to the generated formate film 3 under the reducing atmosphere to decompose the formate. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
