| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce contact resistance of an electrode formed on the ridge stripe including a current non-injection region, to suppress discontinuous hops that appear in current-optical output characteristics, and to implement a high output operation. Ž<P>SOLUTION: A semiconductor light emitting device includes at least an n-type cladding layer 2, an active layer 4, a p-type cladding layer 6, and a p-type contact layer 8 stacked in this order on a substrate 1, and further includes a ridge portion 6a including the p-type cladding layer and the p-type contact layer. On the p-type cladding layer, are formed a dielectric film 10 which covers the ridge portion and has an opening selectively exposing a top of the ridge portion, and a P electrode 9 in contact with a top surface and a side surface of the p-type contact layer exposed from the dielectric film. The dielectric film includes the current non-injection region 30 which covers an end of the ridge portion to block current injection to the active layer, and the current non-injection region of the dielectric film is formed in contact with the p-type contact layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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