| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an MOCVD device configured to grow crystal after sufficiently decomposing sources by heating at temperatures showing optimum decomposition efficiency for the respective sources before reaching a substrate surface. Ž<P>SOLUTION: In the MOCVD device for forming a film of a metal compound on a substrate by supplying a plurality of semiconductor material gases prepared by vaporizing an organic metal complex, the inside of a reaction chamber supplied with the plurality of semiconductor material gases is controlled to have a plurality of temperature regions partially different from one another. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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