| 摘要 |
<P>PROBLEM TO BE SOLVED: To efficiently inject a highly polarized spin current. Ž<P>SOLUTION: A semiconductor device includes; a semiconductor substrate 2; and a ferromagnetic laminated film 20 which is arranged on the semiconductor substrate, including the first Heusler alloy layer 24, and the first non-magnetic layer 26 arranged on the first Heusler alloy layer. The magnetic resistance change rate of the ferromagnetic laminated film is vibrated in response to a bias voltage to be applied to the ferromagnetic laminated film. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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