发明名称 FIELD-EFFECT TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a flexible high-performance organic field-effect transistor manufacturable inexpensively through a simple process by combining a specific plastic substrate with a specific resin insulation layer. SOLUTION: The organic field-effect transistor includes, on an insulating support substrate 1, the insulation layer 3, a gate electrode 2 and an organic semiconductor layer 4 isolated from each other by the insulation layer 3, and a source electrode 5 and a drain electrode 6 formed to contact the semiconductor layer 4. The insulating support substrate 1 is formed of polyethylene terephthalate. The insulation layer 3 is formed of one or more kinds selected among polystyrene, polyvinyl phenol, polycarbonate, polyester, polyvinyl acetate, polyurethane, polysulfone, methacrylic resin, epoxy resin, hydrocarbon resin having a cyano group, and phenol resin. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010074188(A) 申请公布日期 2010.04.02
申请号 JP20090293763 申请日期 2009.12.25
申请人 MITSUBISHI CHEMICALS CORP 发明人 KOBASHI MASAHIRO;WADA TAKASHI;ARAMAKI SHINJI;SAKAI YOSHIMASA
分类号 H01L29/786;H01L21/28;H01L21/336;H01L51/05 主分类号 H01L29/786
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