| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device that operates as an FET which has high electron mobility and low access resistance. SOLUTION: The nitride semiconductor device has an A layer 2 having a thickness 3 nm and made of Al<SB>0.22</SB>Ga<SB>0.78</SB>N on GaN 1, a B layer 3 having a thickness of 10 nm and made of In<SB>0.32</SB>Al<SB>0.68</SB>N on the A layer 2, two C layers 4 provided on the A layer 2 to sandwich the B layer 3 in a direction parallel with the B layer 3, having a thickness of 12 nm, and made of Al<SB>0.3</SB>Ga<SB>0.7</SB>N, a gate electrode 9 on the B layer 3, a source electrode 7 on one C layer 4, and a drain electrode 8 on the other C layer 4, and operates as the FET. COPYRIGHT: (C)2010,JPO&INPIT
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