| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate having a structure in which a compound semiconductor element is electrically connected with an Si-LSI element already formed on the same Si substrate, and to provide its manufacturing method. SOLUTION: On a Si monocrystal substrate, the Si-LSI is formed in a state of having no top layer protective coat, and the whole Si-LSI is covered with a SiO<SB>2</SB>layer. The SiO<SB>2</SB>interlayer of a desired area is removed and only the Si-substrate surface of the desired area is exposed. The SiN film which bears the duty for carrying out the protective coat of the Si-LSI is formed in the upper part and the side of Si-LSI. After carrying out termination of the Si-substrate surface which has removed the SiN film and has been exposed by hydrogen atoms, a compound semiconductor film is directly formed on the exposed Si substrate. Moreover, the compound semiconductor film is processed in a desired shape so as to form an element. The protective film of the element is formed, and a contact for connecting the Si-LSI and the compound semiconductor element electrically and metal wiring are provided. COPYRIGHT: (C)2010,JPO&INPIT |
