发明名称 ELECTROSTATIC CHUCK
摘要 PROBLEM TO BE SOLVED: To provide an electrostatic chuck that uses an inorganic material for a dielectric layer and prevents characteristics of heat resistance, corrosion resistance, surface flatness, etc., as advantages of the inorganic material from being degraded, and generates attracting force similar to that of an electrostatic chuck using an organic material such as polyimide for a dielectric layer. SOLUTION: The electrostatic chuck has the dielectric layer 3 on a base made of a conductive silicon substrate 1, wherein the dielectric layer 3 is formed of a single crystal thin film made of one of AlN, GaN, and AlGaN and having a dielectric breakdown electric field strength of≥1 MV/cm on the silicon substrate 1 with a buffer layer 2 interposed, and the buffer layer 2 has a multilayered structure formed by laminating a first nitride semiconductor single crystal layer formed on the silicon substrate 1 and a second nitride semiconductor single crystal layer made of a different material or having a different composition from the first nitride semiconductor single crystal layer alternately in this order. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010073722(A) 申请公布日期 2010.04.02
申请号 JP20080236202 申请日期 2008.09.16
申请人 COVALENT MATERIALS CORP 发明人 OISHI KOJI
分类号 H01L21/683;H02N13/00 主分类号 H01L21/683
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