| 摘要 |
<P>PROBLEM TO BE SOLVED: To maintain a low magnetic coercive force, low magnetostriction, a low RA value, and a high TMR ratio to reduce noise. <P>SOLUTION: A TMR device has a laminated body 1 on which a seed layer 14, an AFM layer 15, a pinned layer 16, a tunnel barrier layer 17, a free layer 18, and a gap layer 19 are laminated in order on a lower shield layer 10. The free layer 18 has a composite structure in which an NBC layer containing no boron and a BC layer containing boron are alternately laminated from the tunnel barrier layer 17. The NBC layer is constituted by CoFe, CoFeM, or CoFeLM, being in contact with the tunnel barrier layer. The BC layer is constituted by CoFeB, CoFeBM, CoB, CoBM, or CoBLM, being thicker than the NBC layer. M and L represent any one type of element among Ni, Ta, Ti, W, Zr, Hf, Tb, and Nb. M and L are an element different from each other. <P>COPYRIGHT: (C)2010,JPO&INPIT |
