FIELD EFFECT TRANSISTOR, MEMORY CELL, AND METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor (FET) for preventing the active areas from being taken down or deformed in a washing step.

SOLUTION: In the configuration of FET, four pillar active areas each including a part in which a channel is generated during the operation of FET are provided on the surface of a semiconductor substrate, wherein the pillar active areas are separated each other by a beam field oxide film 8, gate electrodes 11a and 11b are provided via an gate insulating film 10 so as to contact the side surfaces of the pillar active areas, an upper diffusion layer 14d corresponding to a drain electrode is provided on the top surfaces of the pillar active areas, and lower diffusion layers 9a, 9b, 9c and 9d corresponding to source electrodes are provided on the surface of the silicon substrate 1.

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