发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device with high power supplying ability. SOLUTION: The semiconductor device 1 (100) has a semiconductor substrate 2 in which a functional circuit 21 is formed, a base wiring 33 which passes the neighborhood of a position immediately above a center section O of the functional circuit 21, a power supply pad 4 connected to the end of the base wiring 33, and connection wirings 34, 5, 6 which connect the nearly central part of the functional circuit 21 to the base wiring 33. The base wiring 33 and the power supply pad 4 are disposed on a same layer. By this constitution, the vicinity of the center part of the functional circuit in the semiconductor substrate can be supplied power efficiently, and the power supplying ability is high. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010074018(A) 申请公布日期 2010.04.02
申请号 JP20080241987 申请日期 2008.09.22
申请人 NEC ELECTRONICS CORP 发明人 KATO TETSUYA
分类号 H01L21/822;H01L21/3205;H01L21/82;H01L23/52;H01L27/04 主分类号 H01L21/822
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