| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can be made thin and small, and meets the needs for heat resistance. <P>SOLUTION: On the surface of a resin film, a silicon nitride layer or a silicon oxynitride layer is formed, an electrode pattern is formed of a copper based metal layer of a circuit board on which the copper based metal layer is formed, and electronic components are mounted on the electrode pattern. Thus, the fine electrode pattern can be formed by fine etching because the adhesiveness of the copper based metal layer becomes excellent and side etching occurs less frequently, and the semiconductor device itself can be easily miniaturized. <P>COPYRIGHT: (C)2010,JPO&INPIT |
