发明名称 |
HIGH RESISTANCE ZINC OXIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a zinc oxide single crystal for various devices where Li concentration is extremely low and resistivity is high. SOLUTION: The desired zinc oxide single crystal is obtained by using a raw material 26 not containing Li substantially and a mineralizer solution and by a hydrothermal synthesis under the existence of a peroxide and at a high partial pressure of oxygen. At least one or more kinds of peroxides represented by hydrogen peroxide are added into the mineralizer solution by 0.02-0.5 mole/L in terms of oxygen generated by decomposition. COPYRIGHT: (C)2010,JPO&INPIT
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申请公布号 |
JP2010070423(A) |
申请公布日期 |
2010.04.02 |
申请号 |
JP20080240947 |
申请日期 |
2008.09.19 |
申请人 |
TOKYO DENPA CO LTD |
发明人 |
MAEDA KATSUMI;SUGIMURA SHIGEAKI;SUZUKI TAKAO;ISHIZAKI YUJI |
分类号 |
C30B29/16;C30B7/10;H01L21/368 |
主分类号 |
C30B29/16 |
代理机构 |
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