| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device capable of improving a coupling ratio of a cell transistor. Ž<P>SOLUTION: The nonvolatile semiconductor storage device includes a cell transistor CT. The cell transistor CT includes a tunnel insulating film 11 formed on an element region 10, a floating gate electrode 12, a control gate electrode 14, and an inter-gate insulating film 13 formed between the floating gate electrode 12 and the control gate electrode 14. The floating gate electrode 12 is so formed that its plane shape has a width W in a y direction in a part and has a width narrower than the width W in the other part by forming a recess formed by denting a side surface directed to the y direction. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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