| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a whole area in a semiconductor memory device by decreasing the number of lines required for embodiment of an inversion function. <P>SOLUTION: The semiconductor memory device includes a selector for selectively loading read inversion information and write inversion information on an inversion bus, the inversion bus for transferring the inversion information loaded in the selector, a plurality of read inversion units reflecting the read inversion information transmitted from the inversion bus to output data, and a plurality of write inversion units reflecting the write inversion information transmitted from the inversion bus to input data. <P>COPYRIGHT: (C)2010,JPO&INPIT |
