| 摘要 |
PROBLEM TO BE SOLVED: To prevent malfunctions of a circuit by suppressing the generation of a displacement current charging/discharging parasitic capacity formed of an insulation film between a support substrate and an active layer caused by a dv/dt surge. SOLUTION: The support substrate 2 is left only below a low-potential reference circuit LV and a high-potential reference circuit HV. Accordingly, a part below the low-potential reference circuit LV and a part below the high-potential reference circuit HV among the support substrate 2 are brought into states of being insulated by an insulation member 30. Furthermore, both the high-potential reference circuit HV and support substrate 2 and the low-potential reference circuit LV and the support substrate 2, or at least the high-potential reference circuit HV and the support substrate 2 are held at the same potential. COPYRIGHT: (C)2010,JPO&INPIT |
