| 摘要 |
PROBLEM TO BE SOLVED: To improve a reliability with respect to a semiconductor memory and an operating method thereof. SOLUTION: Each of a plurality of memory cells arranged in a matrix includes a resistance variable element and a selection transistor in which one side of the source or drain is connected to one end of the resistance variable element. A sub-source line is connected in common to the resistance variable element in the memory cells connected to the predetermined two or more word lines. At the operating time to set the resistance value of the resistance variable element to be low, all the word lines corresponding to source lines to be supplied with the set voltage are activated and a corresponding selection transistor is turned on. Thus, a voltage to be applied between source-drain of the selection transistor to be turned on can be lowered. By executing the set operation in units of the predetermined number of word lines, a current consumption at the set operation can be reduced. As a result, reliability of the semiconductor memory is improvable. COPYRIGHT: (C)2010,JPO&INPIT |
