发明名称 MULTI-TERMINAL SEMICONDUCTOR SWITCH
摘要 PROBLEM TO BE SOLVED: To provide a multi-terminal semiconductor switch for wider band, smaller size, and lower cost, as a 1-input/multi-output switch and a multi-input/1-output switch. SOLUTION: A source or drain of n-number of FET42<SB>1</SB>-42<SB>4</SB>and m-number of FET42<SB>5</SB>-42<SB>8</SB>are connected to wirings 21<SB>1</SB>-21<SB>4</SB>and wirings 21<SB>5</SB>-21<SB>8</SB>which are results of n-blanching and m-blanching of wirings 20<SB>2</SB>and 20<SB>3</SB>from a first terminal and respective individual terminals of an SPDT switch 8 connected to a common terminal using a wiring 20<SB>1</SB>, as an SP(n+m)T switch for controlling switching among the first terminal, n-number (n: positive integer of 2 or larger, n=4 in case of Fig.1) of second terminals and m-number (m: positive integer of 2 or larger m=4 in case of Fig.1) of third terminals. The drain or source of the FETs is connected to the second or third terminals, respectively. The wirings 21<SB>1</SB>-21<SB>4</SB>and the wirings 21<SB>5</SB>-21<SB>8</SB>are formed linear, respectively, with lengthes of them being identical. COPYRIGHT: (C)2010,JPO&amp;INPIT
申请公布号 JP2010074025(A) 申请公布日期 2010.04.02
申请号 JP20080242091 申请日期 2008.09.22
申请人 NIPPON TELEGR & TELEPH CORP 发明人 KAMITSUNA HIDEKI;ONODERA KIYOMITSU;SUGITANI SUEHIRO;NISHIMURA KAZUMI
分类号 H01L21/822;H01L21/8234;H01L27/04;H01L27/088;H03K17/693 主分类号 H01L21/822
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