| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ion implantation method for using an ion implantation mask which is stable even with a fine pattern without fall to form a good annular ion implantation region. Ž<P>SOLUTION: A method includes a step of carrying out ion implantation for a plurality of times by using a plurality of ion implantation masks whose main mask 23 is coupled by a bridge 24 and which includes an opening 25 corresponding to a part of an annular region to which ion implantation should be performed. By this combination of ion implantation masks, a plurality of annular ion implantation regions are formed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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