| 摘要 |
PROBLEM TO BE SOLVED: To provide a means for suppressing the dispersion of sensitivity of a single-chip illuminance sensor formed on a semiconductor substrate of an SOI structure. SOLUTION: The illuminance sensor is formed on the semiconductor substrate having a silicon board, an embedded oxide film formed on the silicon board, and a silicon semiconductor layer formed on the embedded oxide film. The illuminance sensor includes a signal processing circuit formed on the silicon semiconductor layer, and a visible light sensitive element formed on the silicon board. A masking film is formed on the silicon semiconductor layer around a natural lighting portion on a light-receiving portion of the visible light sensitive element. COPYRIGHT: (C)2010,JPO&INPIT
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