| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents the generation of notch of an insulating layer in a via hole bottom formed in a semiconductor substrate, avoid a damage which may be caused in an interconnect layer under the via hole, and can reduce electric insulating deterioration and poor connection of the interconnect layer, and to provide a method of manufacturing the same. Ž<P>SOLUTION: The semiconductor device includes a first insulating layer 203; a first interconnect layer 204 on the first insulating layer; a via hole 201a penetrating through the semiconductor 201 and being equipped at a bottom with a sectional etching part which is obtained by removing the first insulating layer to a perpendicular direction; a second insulating layer 206 which covers from an inner wall except the sectional etching part of the via hole at the bottom, to the second surface of the semiconductor substrate; an opening 203a which is formed on the first insulating layer so that the first interconnect layer is exposed to the bottom of the via hole; and the second interconnect layer 202 which is in contact with the first interconnect layer at the opening and extends from the second insulating layer of the via hole to the second insulating layer of the second surface of the semiconductor substrate, wherein the first insulating layer in contact with the opening has smaller thickness than the first insulating layer in contact with the semiconductor substrate. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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