| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is miniaturized and which can reduce unfavorable effects of an inductance component during handling of a high-frequency signal and can improve heat radiation performance. <P>SOLUTION: The semiconductor device includes: a substrate including an inner layer conductor and a cavity having a bottom surface where a part of the inner layer conductor is exposed; and a first semiconductor element in contact with the inner layer conductor in the cavity directly or through a high heat-conductive member. <P>COPYRIGHT: (C)2010,JPO&INPIT |
