| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a preparation method of an etching liquid which can easily and speedily dissolve the desired quantity of silicon in a flowing phosphoric acid solution. Ž<P>SOLUTION: A preparation method of an etching liquid, etching method and etching device are constituted wherein, liquid-state tetraethoxysilane is mixed with water or gas and added into a flowing phosphoric acid solution little by little thereafter, and the phosphoric acid solution is prepared by dissolving the desired quantity of tetraethoxysilane. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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