| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrostatic protective circuit for protecting a circuit to be protected against overvoltage breakdown due to static electricity while preventing excessive continuity of a latch up operation of a thyristor. Ž<P>SOLUTION: A pnp bipolar transistor and an npn bipolar transistor which are formed in a thyristor structure are provided. A base terminal of the pnp bipolar transistor is connected to a reference power supply terminal connected to the circuit to be protected, and a Zener diode caused to be conductive when a voltage to be applied to both ends is not less than a predetermined voltage and interrupted when the voltage is less than the predetermined voltage is provided between the base terminal of the pnp bipolar transistor and a collector terminal of the npn bipolar transistor. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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