发明名称 METHOD FOR PRODUCING HIGH RESISTIVITY AND HIGH PURITY ZINC OXIDE SINGLE CRYSTAL
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for producing a zinc oxide (ZnO) single crystal having low concentration of impurities and high resistivity. Ž<P>SOLUTION: As an alkali solution is used as a dissolving liquid when growing a zinc oxide single crystal by a hydrothermal synthesis method, an alkali metal such as Li and the like is impregnated in the grown crystal with high concentration. Although a heat-treating method of the crystal exists formerly for removing the alkali metal, the resistivity of the crystal becomes low because of high temperature treatment. In the method for producing a high resistivity and high purity zinc oxide crystal, a metal electrode film 54 is formed or a metallic foil is adhered on a pair of faces opposed to the zinc oxide crystal or a zinc oxide single crystal substrate 41 and the impurities in the crystal are reduced by applying an electric field under a lower temperature than above while keeping high resistivity. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010070424(A) 申请公布日期 2010.04.02
申请号 JP20080240948 申请日期 2008.09.19
申请人 TOKYO DENPA CO LTD 发明人 MAEDA KATSUMI;SUGIMURA SHIGEAKI;HORIKAWA KOJI
分类号 C30B29/16;C30B7/10;C30B33/02;C30B33/04 主分类号 C30B29/16
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