发明名称 SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor apparatus capable of preventing deterioration of wettability of Al, increase of cost in using an antioxidant material for suppressing the deterioration of wettability, increase of processes for material production, and damage of a semiconductor element caused by thermal stress at cooling after connection or at temperature cycle when a Zn-Al alloy solder is used, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor apparatus is configured by a semiconductor element 4, a connected member 5, and a first connection layer that connects the semiconductor element with the connected member. The first connection layer has a configuration in which Zn-Al alloy layers 31a and 31b are provided on both sides of an Al layer 1. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010073908(A) 申请公布日期 2010.04.02
申请号 JP20080240194 申请日期 2008.09.19
申请人 HITACHI LTD 发明人 IKEDA YASUSHI;MATSUYOSHI SATOSHI;HIRAMITSU SHINJI
分类号 H01L21/52;H01L23/48 主分类号 H01L21/52
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