| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an aqueous dispersion for chemical mechanical polishing and a chemical mechanical polishing method for polishing semiconductor wafers containing tungsten non-selectively at a high speed. <P>SOLUTION: There is provided an aqueous dispersion for chemical mechanical polishing for polishing a to-be-treated object provided with an interconnection layer containing tungsten. The aqueous dispersion contains (A) a cation water-soluble polymer, (B) an iron (III) compound, and (C) colloidal silica particles, where the content (M<SB>A</SB>) [mass%] of the component (A) and the content (M<SB>B</SB>) [mass%] of the component (B) satisfy a relationship of M<SB>A</SB>/M<SB>B</SB>=0.004 to 0.1, and has a pH value of 1 to 3. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
