| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a compound semiconductor laminate enabling a GaN film to be formed on a Si substrate, and capable of industrially providing development of application to electronic devices such as optical devices, transistors or the like, and also to provide a method for manufacturing the same. <P>SOLUTION: An active layer 2 of In<SB>x</SB>Ga<SB>y</SB>Al<SB>z</SB>N (0≤x, y, z≤1) is directly formed on a Si substrate 1. A material containing As exists in an interface of the active layer 2 and a single crystal layer of the Si substrate 1, in an island shape. The Si substrate 1 is a bulk single crystal substrate or a thin film substrate an uppermost layer of which is Si. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
