发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF MASK |
摘要 |
Provided is a technique capable of improving the dimensional accuracy of a transfer pattern in a lithography technique in which EUV light is used and the EUV light is incident obliquely on a mask and an image of the EUV light reflected from the mask is formed on a semiconductor substrate (resist film), thereby transferring the pattern formed on the mask onto the semiconductor substrate. The present invention is based on a lithography technique in which EUV light is used and an exposure optical system in which the EUV light is obliquely incident on a mask is used. In this lithography technique, an absorber and a difference in level are formed on the mask, and a projective component projected on a mask surface out of a direction cosine component of the incident light is set to be almost orthogonal to an extending direction of the difference in level.
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申请公布号 |
US2010080647(A1) |
申请公布日期 |
2010.04.01 |
申请号 |
US20090563265 |
申请日期 |
2009.09.21 |
申请人 |
RENESAS TECHNOLOGY CORP.;KABUSHIKI KAISHA TOSHIBA |
发明人 |
TERASAWA TSUNEO;YAMANE TAKESHI |
分类号 |
G03F1/22;G03F1/24;G03F7/20;H01L21/027 |
主分类号 |
G03F1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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