| 摘要 |
A resonator in a semiconductor laser device includes a semiconductor substrate, an n-type cladding layer and a p-type cladding layer formed on or above the semiconductor substrate, and an active layer sandwiched between the n-type cladding layer and the p-type cladding layer. A ridge extending in an axial direction of the resonator is formed at an upper surface of the resonator. The ridge includes an emitting-side end portion, a non-emitting-side end portion, a taper portion allowing a width of the ridge to be decreased in a taper-like manner from the emitting-side end portion toward the non-emitting-side end portion, and a step portion provided on a side of the emitting-side end portion with respect to the non-emitting-side end portion, and allowing the width of the ridge to be changed in a step-like manner.
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