发明名称 |
MASK PATTERN FOR SELECTIVE AREA GROWTH OF SEMICONDUCTOR LAYER AND SELECTIVE AREA GROWTH METHOD USING THE MASK PATTERN FOR SEMICONDUCTOR LAYER |
摘要 |
Provided is a mask pattern for selective area growth of a semiconductor layer and a selective area growth method for a semiconductor layer for independently controlling a growth rate and a strain of the semiconductor layer. The selective area growth method includes: forming a plurality of pairs of first mask patterns, the first mask patterns in each pair including a first open area therebetween, the first open area having a width that is wider than a distance causing overgrowth of the semiconductor layer, the pairs of the first mask patterns repeatedly arranged with a period P therebetween; wherein controlling a growth rate and a strain of the semiconductor layer formed on the first open area by adjusting the period P.
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申请公布号 |
US2010081225(A1) |
申请公布日期 |
2010.04.01 |
申请号 |
US20070517357 |
申请日期 |
2007.10.16 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
SONG JUNG-HO;KIM KISOO;KIM GYUNGOCK |
分类号 |
H01L33/30;B05C11/00;H01L21/20 |
主分类号 |
H01L33/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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