INFRARED SENSOR

摘要

Disclosed is an infrared sensor (1) comprising a base (10) and an infrared detecting element (3) provided on one surface side of the base (10).  The infrared detecting element (3) comprises a thin-film infrared absorber (33) that absorbs infrared light, a temperature detecting element (30) that detects a difference in temperature between the infrared absorber (33) and the base (10), and a compensating film (39).  The infrared absorber (33) is disposed on the one surface side of the base (10) so that a heat insulating space is provided between the infrared absorber (33) and the base (10).  The temperature detecting element (30) comprises a p-type polysilicon layer (35) and an n-type polysilicon layer (34) that are formed so as to span the infrared absorber (33) and the base (10), and a connecting layer (36) that electrically connects the p-type polysilicon layer (35) and the n-type polysilicon layer (34) on the infrared absorber (33).  The compensating film (39) is a polysilicon film that is provided on an infrared incident plane in the infrared absorber (33), which is a plane remote from the base (10), so as to cover the infrared incident plane.