| 摘要 |
The present invention relates to a process for fabricating a semiconductor ceramic comprising 10 to 30% by volume of a conducting phase based on MoSi2 particles and 70 to 90% by volume of a particulate insulating phase, the size of MoSi2 particles being between 15 nm and 5 µm and the distance between two adjacent MoSi2 particles being between 0.1 and 6 µm, the process comprising: (1) preparation of a uniform suspension of a conducting phase based on MoSi2 particles in order to obtain a first slip; (2) preparation of a uniform suspension of a particulate insulating phase, in order to obtain a second slip; (3) mixing of the first and second slips, in order to obtain a mixture of the two phases in the desired proportions; (4) drying and screening of the composition; and (5) sintering of the composition. The invention also relates to the semiconductor ceramic obtained by this process. |
