NONVOLATILE MEMORY DEVICE AND METHODS FOR RECORDING AND READING INFORMATION ON NONVOLATILE MEMORY DEVICE

摘要

Disclosed are a nonvolatile memory device and methods for recording and reading the information on the nonvolatile memory device. The nonvolatile memory device according to the present invention includes a memory layer interposed between lower and upper electrodes. The memory layer made of a ferroelectric material includes: an information storage layer that stores information according to the polarity of remanent polarization; and a switching layer that is: made of an insulator, provides resistance when switching the polarization of the ferroelectric material, and acts as a capacitor of the ferroelectric material after switching or not switching the polarization of the ferroelectric material. In the nonvolatile memory device according to the invention which is a new conceptional nonvolatile memory device, the information is stored in the information storage layer made of the ferroelectric material and is read out by evaluating the characteristics of the switching layer made of the insulator. In addition, the nonvolatile memory device is very durable and has a high capacity for data even though the thickness of the memory layer is scaled down below 100nm.