METHOD FOR ERASING DATA OF FLASH MEMORY DEVICE HAVING CHARGE TRAP LAYER

摘要

PURPOSE: A data erasure method of a charge trap type flash memory device is provided to improve erasure speed by injecting a plurality of carriers into a well region by applying proper bias between well regions. CONSTITUTION: A first bias is applied between a semiconductor substrate and a second well region so that the carriers of the semiconductor substrate is inserted to the second well region(110). A second bias is applied between the semiconductor substrate and the second well region so that carriers inserted to the second well region(120) is accelerated to the first well region side. A specified voltage is applied between a control gate of the memory cell and the semiconductor substrate(100).