| 摘要 |
An aluminum fluoride thin film deposition method includes the steps of (a) putting a substrate and a pure aluminum target in a plasma sputtering system, (b) applying argon plasma to the plasma sputtering system to remove impurities from the aluminum target, (c) applying CF4 gas, which is stable at room temperature under the atmospheric pressure, to the plasma sputtering system to bombard the aluminum target with energetic ions and to have aluminum atoms be ejected from the aluminum target and fluorinated so that a thin-film coating of aluminum fluoride is deposited on the surface of the substrate.
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