| 摘要 |
A technique capable of improving the reliability of a non-volatile memory semiconductor device is provided and, in particular, a technique capable of supplying electricity without fail to a memory gate electrode of split gate transistor is provided. One end of an electricity supply line ESL is arranged over a terminal end TE1 and the other end thereof is arranged over a terminal end TE2, and further, the central portion of the electricity supply line ESL is arranged over a dummy part DMY. That is, the terminal end TE1, the terminal end TE2, and the dummy part DMY have substantially the same height, and therefore, most of the electricity supply line ESL arranged from over the terminal end TE1 to over the terminal end TE2 via the dummy part DMY is formed so as to have the same height.
|
