发明名称 Self-assembly process for memory array
摘要 A method of making a device includes forming at least one anodizable metal layer over at least one of an electrode or a semiconductor device, forming a plurality of pores in the anodizable metal layer by anodization of the anodizable metal layer to expose a portion of the electrode or semiconductor device, and filling at least one pore with a rewritable material such that at least some of the rewritable material is in electrical contact with the electrode or semiconductor device.
申请公布号 US2010078618(A1) 申请公布日期 2010.04.01
申请号 US20080285220 申请日期 2008.09.30
申请人 SANDISK 3D LLC 发明人 XIAO LI;ZHANG JINGYAN;ZHONG HUICAI
分类号 H01L45/00;H01L21/329 主分类号 H01L45/00
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