| 摘要 |
According to an aspect of the present invention, there is provided a method for manufacturing a semiconductor device, the method including; sequentially forming a first film and a second film on a base film; processing the second film, thereby forming a second pattern; processing the first film with the second pattern, thereby forming a first pattern; removing the second pattern; depositing a third film on the base film and the first pattern; processing the third film, thereby forming a third pattern on side walls of the first pattern; removing the first pattern; and processing the base film with the third pattern; wherein, when processing the third film, a process condition is adjusted based on at least one information of a size of the second pattern and a size of the first pattern.
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