METHOD FOR FABRICATING DUAL POLYSILICON GATE

摘要

PURPOSE: It N type impurity in the P-type poly silicon layer the counter doping and the dual poly silicon gate production method changes into N type poly silicon layer. The bowing of the metal electrode, and the tapered profile and loading of the poly silicon layer are prevented. CONSTITUTION: Provided is the substrate(11) comprised of the NMOS and PMOS. The respective N type poly silicon layer(13A) and P-type poly silicon layer(13B) are formed in the top of the substrate of PMOS and NMOS. The gate electrode metal film(15) and gate hard mask membrane are laminated on N type and P-type poly silicon layer. The gate hard mask membrane and gate electrode metal film are patterned and N type and P-type poly silicon layer expose.